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TYPICAL PERFORMANCE CURVES
APT15GP60BDQ1
600V
APT15GP60BDQ1
POWER MOS 7 IGBT
(R)
TO-247
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
(R)
G
C
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage
* 100 kHz operation @ 400V, 19A * 200 kHz operation @ 400V, 12A * SSOA rated
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT15GP60BDQ1 UNIT Volts
600 20 56 27 65 65A @ 600V 250 -55 to 150 300
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 275
2
10-2005 050-7449 Rev B
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
ICES I GES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
A nA
3000 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT15GP60BDQ1
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 15A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 15A
4 5
MIN
TYP
MAX
UNIT pF V nC A
1685 210 15 7.5 55 12 15 65 8 12 29 60 130 150 120 8 12 70 90 130 265 270 J
ns ns
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 15A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode)
66
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.50 1.35 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
10-2005
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7449
Rev B
TYPICAL PERFORMANCE CURVES
30 25 20 15 10 5 0 TC=25C TC=125C TC=-55C
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
30 25 20 15 10 5 0
APT15GP60BDQ1
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TC=25C TC=125C TC=-55C
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 15A TJ = 25C
FIGURE 1, Output Characteristics(VGE = 15V) 100 TJ = -55C
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 GATE CHARGE (nC) FIGURE 4, Gate Charge 60 VCE = 480V
IC, COLLECTOR CURRENT (A)
80
VCE = 120V VCE = 300V
60
40 TJ = 25C 20 TJ = 125C 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5
3.5 3 2.5 2 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC =30A IC = 15A 2 1.5 1 0.5 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2 0 6 IC = 7.5A
IC =30A IC = 15A IC = 7.5A
0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80
0 -50
-25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
IC, DC COLLECTOR CURRENT(A)
1.15
70 60 50 40
10-2005
30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
050-7449
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
Rev B
18
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
80 70 60 50 40 30 20 10 0 VCE = 400V RG = 5 L = 100 H
VGE =15V,TJ=25C VGE =10V,TJ=125C
APT15GP60BDQ1
VGE =15V,TJ=125C
16 14 12 10 8 6 4 2 0 VCE = 400V TJ = 25C or 125C RG = 5 L = 100 H VGE= 10V VGE= 15V
VGE =10V,TJ=25C
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30
TJ = 25 or 125C,VGE = 10V
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
25
tr, RISE TIME (ns) tf, FALL TIME (ns)
80
TJ = 125C, VGE = 10V or 15V
20 15 10 5 0
TJ = 25 or 125C,VGE = 15V RG =5, L = 100H, VCE = 400V
60
TJ = 25C, VGE = 10V or 15V
40
20
RG =5, L = 100H, VCE = 400V
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 700
EON2, TURN ON ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 700
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
0
TJ = 125C, VGE = 10V or 15V
600 500 400 300 200
TJ =125C, VGE=15V
600 500 400 300 200 100 0
TJ =125C,VGE=10V
TJ = 25C, VGE=15V
100 0
TJ = 25C, VGE=10V
TJ = 25C, VGE = 10V or 15V
0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 900
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V TJ = 125C
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 700
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V RG = 5
800 700 600 500 400 300 200 100 0 0
Eon2 30A
600 500
Eoff 30A
Eon2 30A 400 300 200 100 0 -50
Eoff 30A
10-2005
Eon2 15A Eoff 15A Eon2 7.5A Eoff 7.5A
Eon2 15A Eoff 15A
Eon2 7.5A Eoff 7.5A
Rev B
050-7449
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
4,000
IC, COLLECTOR CURRENT (A)
70 Cies 60 50 40 30 20 10 0
APT15GP60BDQ1
1,000
C, CAPACITANCE ( F)
500 Coes 100 50 Cres 10
P
10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.3
ZJC, THERMAL IMPEDANCE (C/W)
Note:
PDM
t1 t2
0.20
0.10 0
0.1 0.05 10-5 10-4 SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
292
Junction temp. ( "C) 0.216 Power (Watts) 0.284 Case temperature 0.164 0.00600
FMAX, OPERATING FREQUENCY (kHz)
RC MODEL
100
50
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
5
10
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
050-7449
Rev B
TJ - TC R JC
10-2005
APT15GP60BDQ1
Gate Voltage
APT15DF60
10%
TJ = 125 C
td(on)
V CC IC V CE
tr 90%
A D.U.T.
Collector Current
5%
Switching Energy
10%
5%
Collector Voltage
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% Gate Voltage Collector Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
A V CE 100uH IC V CLAMP B
td(off)
tf
90%
10% Switching Energy
0
A DRIVER* D.U.T.
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7449
Rev B
10-2005
TYPICAL PERFORMANCE CURVES
APT15GP60BDQ1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 129C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 15A Forward Voltage IF = 30A IF = 15A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT15GP60BDQ1 UNIT Amps
15 30 110
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.0 2.5 1.6
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.40
, THERMAL IMPEDANCE (C/W)
15 19 21 2 105 250 5 55 420 15 -
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 15A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
1.20 1.0 0.80
0.9
0.7
0.5 0.60 0.40 0.20 0 0.3 Note:
PDM t1 t2
JC
0.1 0.05 10-5 10-4
Z
SINGLE PULSE 10-3 10-2
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.725 C/W 0.00166 J/C
Case temperature (C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7449
0.172 C/W
0.645 J/C
Rev B
Power (watts)
0.455 C/W
0.0381 J/C
10-2005
APT15GP60BDQ1
60 50
IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns)
140 120 30A 100 80 60 40 20 15A
TJ = 125C VR = 400V
40 30 20 TJ = 125C 10 0 TJ = 25C TJ = -55C 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage
TJ = 150C
7.5A
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change 25
IRRM, REVERSE RECOVERY CURRENT (A)
TJ = 125C VR = 400V
0
700
Qrr, REVERSE RECOVERY CHARGE (nC)
600 500 400 300 200 100 0 0
TJ = 125C VR = 400V
30A
20
30A
15
15A
10 15A 5 7.5A
7.5A
200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 t rr
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 35 30 25
IF(AV) (A)
Duty cycle = 0.5 TJ = 175C
0
Qrr
1.0 0.8 0.6 t rr 0.4 0.2 0.0 Qrr
I RRM
20 15 10 5
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 90 80
CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
0
25
50
70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 1
050-7449
Rev B
10-2005
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT6017LLL
APT15GP60BDQ1
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7449
5.45 (.215) BSC 2-Plcs.
Rev B
Gate Collector (Cathode) Emitter (Anode)
10-2005
1.65 (.065) 2.13 (.084)

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